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1

Influence of the growth method on degradation of InGaN laser diodes

Bojarska, Agata, Muzioł, Grzegorz, Skierbiszewski, Czesław, Grzanka, Ewa, Wiśniewski, Przemysław, Makarowa, Irina, Czernecki, Robert, Suski, Tadek, Perlin, Piotr

Journal:

Applied Physics Express

Year:

2017

Language:

english

File:

PDF, 1.88 MB

english, 2017

2

True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

Skierbiszewski, Czeslaw, Muziol, Grzegorz, Nowakowski-Szkudlarek, Krzesimir, Turski, Henryk, Siekacz, Marcin, Feduniewicz-Zmuda, Anna, Nowakowska-Szkudlarek, Anna, Sawicka, Marta, Perlin, Piotr

Journal:

Applied Physics Express

Year:

2018

Language:

english

File:

PDF, 1.12 MB

english, 2018

3

Surface and in-depth characterization of InGaN compounds synthesized by plasma-assisted molecular beam epitaxy

Mirosław Krawczyk, Wojciech Lisowski, Janusz W. Sobczak, Andrzej Kosiński, Aleksander Jablonski, Czesław Skierbiszewski, Marcin Siekacz, Sylwia Wiązkowska

Journal:

Journal of Alloys and Compounds

Year:

2011

Language:

english

File:

PDF, 515 KB

english, 2011

4

Experimental studies of the conduction-band structure of GaInNAs alloys

Skierbiszewski, Czeslaw

Journal:

Semiconductor Science and Technology

Year:

2002

Language:

english

File:

PDF, 940 KB

english, 2002

5

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, USA (Saturday 2 February 2013)] Gallium Nitride Materials and Devices VIII - Role of nonequivalent atomic step edges in the growth of InGaN by plasma-assisted molecular beam epitaxy

Turski, Henryk, Siekacz, Marcin, Sawiska, Marta, Wasilewski, Zbig R., Porowski, Sylwester, Skierbiszewski, Czesław, Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, Fuji

Year:

2013

Language:

english

File:

PDF, 6.04 MB

english, 2013

6

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, USA (Saturday 2 February 2013)] Gallium Nitride Materials and Devices VIII - True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates

Turski, Henryk, Siekacz, Marcin, Muzioł, Grzegorz, Sawicka, Marta, Grzanka, Szymon, Perlin, Piotr, Suski, Tadeusz, Wasilewski, Zbig R., Grzegory, Izabella, Porowski, Sylwester, Skierbiszewski, Czeslaw

Year:

2013

Language:

english

File:

PDF, 532 KB

english, 2013

7

High quality m-plane GaN grown under nitrogen-rich conditions by plasma assisted molecular beam epitaxy

Sawicka, Marta, Feduniewicz-Żmuda, Anna, Turski, Henryk, Siekacz, Marcin, Grzanka, Szymon, Kryśko, Marcin, Dzięcielewski, Igor, Grzegory, Izabella, Skierbiszewski, Czesław

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2011

Language:

english

File:

PDF, 695 KB

english, 2011

8

interface

Wolos, Agnieszka, Jantsch, Wolfgang, Dybko, Krzysztof, Wilamowski, Zbyslaw, Skierbiszewski, Czeslaw

Journal:

Physical Review B

Year:

2007

Language:

english

File:

PDF, 525 KB

english, 2007

9

) grown under nitrogen-rich conditions by plasma-assisted molecular beam epitaxy

Sawicka, Marta, Turski, Henryk, Siekacz, Marcin, Smalc-Koziorowska, Julita, Kryśko, Marcin, Dzięcielewski, Igor, Grzegory, Izabella, Skierbiszewski, Czesław

Journal:

Physical Review B

Year:

2011

Language:

english

File:

PDF, 1.18 MB

english, 2011

10

Mismatch relaxation by stacking fault formation of AlN islands in AlGaN/GaN structures on m-plane GaN substrates

Smalc-Koziorowska, Julita, Sawicka, Marta, Remmele, Thilo, Skierbiszewski, Czeslaw, Grzegory, Izabella, Albrecht, Martin

Journal:

Applied Physics Letters

Year:

2011

Language:

english

File:

PDF, 1.91 MB

english, 2011

11

Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy

Turski, Henryk, Siekacz, Marcin, Sawicka, Marta, Wasilewski, Zbig R., Porowski, Sylwester, Skierbiszewski, Czeslaw

Journal:

Japanese Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 796 KB

english, 2013

12

Coexistence of Two Localised States of the Ge Donor in GaAs as Evidenced by a Huge Increase of the Electron Mobility at PPC Conditions

Skierbiszewski, Czeslaw, Wiśniewski, P., Suski, T., Wilamowski, Zbysław, Ostermayer, G., Jantsch, W., Walker, P., Mason, N.J., Singleton, J.

Journal:

Materials Science Forum

Year:

1994

File:

PDF, 403 KB

1994

13

Doping-Induced Contrast in the Refractive Index for GaInN/GaN Structures at Telecommunication Wavelengths

Cywiński, Grzegorz, Kudrawiec, Robert, Rzodkiewicz, Witold, Kryśko, Marcin, Litwin-Staszewska, Elżbieta, Łucznik, Bolesław, Misiewicz, Jan, Skierbiszewski, Czesław

Journal:

Applied Physics Express

Year:

2009

Language:

english

File:

PDF, 124 KB

english, 2009

14

True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

Skierbiszewski, Czeslaw, Siekacz, Marcin, Turski, Henryk, Muziol, Grzegorz, Sawicka, Marta, Wolny, Pawel, Cywiński, Grzegorz, Marona, Lucja, Perlin, Piotr, Wiśniewski, Przemysław, Albrecht, Martin, Wa

Journal:

Applied Physics Express

Year:

2012

Language:

english

File:

PDF, 1.65 MB

english, 2012

15

AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy

Skierbiszewski, Czesław, Siekacz, Marcin, Turski, Henryk, Muzioł, Grzegorz, Sawicka, Marta, Feduniewicz-Żmuda, Anna, Cywiński, Grzegorz, Cheze, Caroline, Grzanka, Szymon, Perlin, Piotr, Wiśniewski, Pr

Journal:

Applied Physics Express

Year:

2012

Language:

english

File:

PDF, 498 KB

english, 2012

16

Enhancement of optical confinement factor by InGaN waveguide in blue laser diodes grown by plasma-assisted molecular beam epitaxy

Muziol, Grzegorz, Turski, Henryk, Siekacz, Marcin, Wolny, Pawel, Grzanka, Szymon, Grzanka, Ewa, Perlin, Piotr, Skierbiszewski, Czeslaw

Journal:

Applied Physics Express

Year:

2015

Language:

english

File:

PDF, 1.27 MB

english, 2015

17

Experimental Evidence for the Two-Electron Nature of In-Related DX States in CdTe

Skierbiszewski, Czeslaw, Wiśniewski, P., Wilamowski, Zbysław, Jantsch, W., Karczewski, G.

Journal:

Materials Science Forum

Year:

1997

File:

PDF, 374 KB

1997

18

Correlated Charged Donors in GaAs/AlGaAs Quantum Well. Quantum- and Mobility-Scattering Times

Suski, T., Wiśniewski, P., Skierbiszewski, Czeslaw, Litwin-Staszewska, E., Brunthaler, G., Köhler, K.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 401 KB

1995

19

Photoluminescence characterization of InGaN/InGaN quantum wells grown by plasma-assisted molecular beam epitaxy: Impact of nitrogen and galium fluxes

Baranowski, Michał, Kudrawiec, Robert, Misiewicz, Jan, Turski, Henryk, Skierbiszewski, Czesław

Journal:

physica status solidi (b)

Year:

2015

Language:

english

File:

PDF, 576 KB

english, 2015

20

A New Type of Metastability due to Donors in GaAs

Skierbiszewski, Czeslaw, Jantsch, W., Wilamowski, Zbysław, Lübke, K., Suski, T.

Journal:

Materials Science Forum

Year:

1995

File:

PDF, 381 KB

1995

21

Blue Laser Diodes by Low Temperature Plasma Assisted MBE

Skierbiszewski, Czeslaw

Journal:

Solid State Phenomena

Year:

2008

Language:

english

File:

PDF, 1.10 MB

english, 2008

22

Photo- and Electroluminescence of Erbium-Doped Silicon

Lanzerstorfer, S., Stepikhova, Margarita, Hartung, J., Skierbiszewski, Czeslaw, Jantsch, W.

Journal:

Materials Science Forum

Year:

1997

File:

PDF, 449 KB

1997

23

AlGaN cladding-free 482 nm continuous wave nitride laser diodes grown by plasma-assisted molecular beam epitaxy

Skierbiszewski, Czesław, Turski, Henryk, Muziol, Grzegorz, Wolny, Paweł, Cywiński, Grzegorz, Grzanka, Szymon, Smalc-Koziorowska, Julita, Sawicka, Marta, Perlin, Piotr, Wasilewski, Zbig R., Porowski, S

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2014

Language:

english

File:

PDF, 1.47 MB

english, 2014

24

Surface properties of c-plane GaN grown by plasma-assisted molecular beam epitaxy

Cywiński, Grzegorz, Kudrawiec, Robert, Janicki, Łukasz, Misiewicz, Jan, Chèze, Caroline, Siekacz, Marcin, Sawicka, Marta, Wolny, Paweł, Boćkowski, Michał, Skierbiszewski, Czesław

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Year:

2013

Language:

english

File:

PDF, 1.11 MB

english, 2013

25

Miscut dependent surface evolution in the process of N-polar GaN(

Krzyżewski, Filip, Załuska-Kotur, Magdalena A., Turski, Henryk, Sawicka, Marta, Skierbiszewski, Czesław

Journal:

Journal of Crystal Growth

Year:

2016

Language:

english

File:

PDF, 741 KB

english, 2016

26

[IEEE 2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) - Krakow, Poland (2016.5.9-2016.5.11)] 2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) - GaN/AlGaN based transistors for terahertz emitters and detectors

Cywinski, Grzegorz, Szkudlarek, Krzesimir, Yahniuk, Ivan, Yatsunenko, Sergey, Siekacz, Marcin, Skierbiszewski, Czeslaw, Knap, Wojciech, But, Dmytro B., Coquillat, Dominique, Dyakonova, Nina, Knap, Woj

Year:

2016

Language:

english

File:

PDF, 6.18 MB

english, 2016

27

[IEEE 2016 MIXDES - 23rd International Conference "Mixed Design of Integrated Circuits and Systems" - Lodz, Poland (2016.6.23-2016.6.25)] 2016 MIXDES - 23rd International Conference Mixed Design of Integrated Circuits and Systems - Lateral Schottky barrier diodes based on GaN/AlGaN 2DEG for sub-THz detection

Cywinski, Grzegorz, Yahniuk, Ivan, Szkudlarek, Krzesimir, Kruszewski, Piotr, Yatsunenko, Sergey, Muziol, Grzegorz, Skierbiszewski, Czeslaw, But, Dmytro, Knap, Wojciech

Year:

2016

Language:

english

File:

PDF, 212 KB

english, 2016

28

Elimination of leakage of optical modes to GaN substrate in nitride laser diodes using a thick InGaN waveguide

Muziol, Grzegorz, Turski, Henryk, Siekacz, Marcin, Grzanka, Szymon, Perlin, Piotr, Skierbiszewski, Czesław

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 3.60 MB

english, 2016

29

Quantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy

Fernández-Garrido, Sergio, Lähnemann, Jonas, Hauswald, Christian, Korytov, Maxim, Albrecht, Martin, Chèze, Caroline, Skierbiszewski, Czesław, Brandt, Oliver

Journal:

Physical Review Applied

Year:

2016

Language:

english

File:

PDF, 4.65 MB

english, 2016

30

[IEEE 2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) - Krakow, Poland (2016.5.9-2016.5.11)] 2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) - GaN/AlGaN lateral Schottky barrier diodes for high frequency applications

Cywinski, Grzegorz, Szkudlarek, Krzesimir, Yahniuk, Ivan, Yatsunenko, Sergey, Kruszewski, Piotr, Muziol, Grzegorz, Skierbiszewski, Czeslaw, Knap, Wojciech, Rumyantsev, S., But, Dmytro

Year:

2016

Language:

english

File:

PDF, 794 KB

english, 2016

31

Surface potential barrier in m -plane GaN studied by contactless electroreflectance

Janicki, Lukasz, Misiewicz, Jan, Cywiński, Grzegorz, Sawicka, Marta, Skierbiszewski, Czeslaw, Kudrawiec, Robert

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 742 KB

english, 2016

32

Investigation of interface abruptness and In content in (In,Ga)N/GaN superlattices

Chèze, Caroline, Siekacz, Marcin, Isa, Fabio, Jenichen, Bernd, Feix, Felix, Buller, Jakov, Schulz, Tobias, Albrecht, Martin, Skierbiszewski, Czeslaw, Calarco, Raffaella, Riechert, Henning

Journal:

Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 2.67 MB

english, 2016

33

MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications

Cywiński, Grzegorz, Szkudlarek, Krzesimir, Kruszewski, Piotr, Yahniuk, Ivan, Yatsunenko, Sergey, Muzioł, Grzegorz, Siekacz, Marcin, Skierbiszewski, Czesław, Rumyantsev, Sergey, Knap, Wojciech

Journal:

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

Year:

2016

Language:

english

File:

PDF, 988 KB

english, 2016

34

Surface Leakage Currents in SiN and Al 2 O 3 Passivated AlGaN/GaN High Electron Mobility Transistors

Bai, Long, Yan, Wei, Li, Zhao-Feng, Yang, Xiang, Zhang, Bo-Wen, Tian, Li-Xin, Zhang, Feng, Cywinski, Grzegorz, Szkudlarek, Krzesimir, Skierbiszewski, Czesław, Knap, Wojciech, Yang, Fu-Hua

Journal:

Chinese Physics Letters

Year:

2016

Language:

english

File:

PDF, 547 KB

english, 2016

35

Sensitivity of Fermi level position at Ga-polar, N-polar, and nonpolar m -plane GaN surfaces to vacuum and air ambient

Janicki, Łukasz, Ramírez-López, Manolo, Misiewicz, Jan, Cywiński, Grzegorz, Boćkowski, Michał, Muzioł, Grzegorz, Chèze, Caroline, Sawicka, Marta, Skierbiszewski, Czesław, Kudrawiec, Robert

Journal:

Japanese Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 897 KB

english, 2016

36

Growth rate independence of Mg doping in GaN grown by plasma-assisted MBE

Turski, Henryk, Muzioł, Grzegorz, Siekacz, Marcin, Wolny, Pawel, Szkudlarek, Krzesimir, Feduniewicz-Żmuda, Anna, Dybko, Krzysztof, Skierbiszewski, Czeslaw

Journal:

Journal of Crystal Growth

Year:

2018

Language:

english

File:

PDF, 1.31 MB

english, 2018

37

[IEEE 2017 75th Device Research Conference (DRC) - South Bend, IN, USA (2017.6.25-2017.6.28)] 2017 75th Annual Device Research Conference (DRC) - S-shaped negative differential resistance in III-Nitride blue quantum-well laser diodes grown by plasma-assisted MBE

Turski, Henryk, Yan, Rusen, Bader, Samuel J, Muziol, Grzegorz, Skierbiszewski, Czeslaw, Xing, Huili Grace, Jena, Debdeep

Year:

2017

Language:

english

File:

PDF, 1.01 MB

english, 2017

38

Hydrogen diffusion in GaN:Mg and GaN:Si

Czernecki, Robert, Grzanka, Ewa, Jakiela, Rafal, Grzanka, Szymon, Skierbiszewski, Czeslaw, Turski, Henryk, Perlin, Piotr, Suski, Tadek, Donimirski, Konstanty, Leszczynski, Mike

Journal:

Journal of Alloys and Compounds

Year:

2018

Language:

english

File:

PDF, 2.00 MB

english, 2018

39

Sensitivity of N-polar GaN surface barrier to ambient gases

Janicki, Łukasz, Misiewicz, Jan, Siekacz, Marcin, Turski, Henryk, Moneta, Joanna, Gorantla, Sandeep, Skierbiszewski, Czesław, Kudrawiec, Robert

Journal:

Sensors and Actuators B: Chemical

Year:

2019

Language:

english

File:

PDF, 1013 KB

english, 2019

40

Transparency of Semi-Insulating, n-Type, and p-Type Ammonothermal GaN Substrates in the Near-Infrared, Mid-Infrared, and THz Spectral Range

Kucharski, Robert, Janicki, Łukasz, Zajac, Marcin, Welna, Monika, Motyka, Marcin, Skierbiszewski, Czesław, Kudrawiec, Robert

Journal:

Year:

2017

Language:

english

File:

PDF, 5.65 MB

english, 2017

41

Depletion Layer Built-In Field at (1−100), (0001), and (000−1) GaN/Water Junction and Its Role in Semiconductor Nanowire Water Splitting

Stokowski, Hubert, Janicki, Łukasz, Serafińczuk, Jarosław, Siekacz, Marcin, Skierbiszewski, Czesław, Kudrawiec, Robert

Journal:

Advanced Materials Interfaces

Year:

2019

Language:

english

File:

PDF, 3.23 MB

english, 2019

42

Optical properties of III-nitride laser diodes with wide InGaN quantum wells

Muziol, Grzegorz, Hajdel, Mateusz, Siekacz, Marcin, Szkudlarek, Krzesimir, Stanczyk, Szymon, Turski, Henryk, Skierbiszewski, Czeslaw

Journal:

Applied Physics Express

Year:

2019

Language:

english

File:

PDF, 2.08 MB

english, 2019

43

Optical properties of III-nitride laser diodes with wide InGaN quantum wells

Muziol, Grzegorz, Hajdel, Mateusz, Siekacz, Marcin, Szkudlarek, Krzesimir, Stanczyk, Szymon, Turski, Henryk, Skierbiszewski, Czeslaw

Journal:

Applied Physics Express

Year:

2019

File:

PDF, 2.08 MB

2019

44

Beyond Quantum Efficiency Limitations Originating from the Piezoelectric Polarization in Light Emitting Devices

Muziol, Grzegorz, Turski, Henryk, Siekacz, Marcin, Szkudlarek, Krzesimir, Janicki, Łukasz, Baranowski, Michal, Zolud, Sebaastial, Kudrawiec, Robert, Suski, Tadeusz, Skierbiszewski, Czeslaw

Journal:

Year:

2019

Language:

english

File:

PDF, 719 KB

english, 2019

45

Nitride LEDs and Lasers with Buried Tunnel Junctions

Turski, Henryk, Siekacz, Marcin, Muzioł, Grzegorz, Hajdel, Mateusz, Stańczyk, Szymon, Żak, Mikołaj, Chlipała, Mikołaj, Skierbiszewski, Czeslaw, Bharadwaj, Shyam, Xing, Huili Grace, Jena, Debdeep

Journal:

ECS Journal of Solid State Science and Technology

Year:

2020

File:

PDF, 857 KB

2020

46

Stacking faults in plastically relaxed InGaN epilayers

Moneta, Joanna, Grzanka, Ewa, Turski, Henryk, Skierbiszewski, Czeslaw, Smalc-Koziorowska, Julita

Journal:

Semiconductor Science and Technology

Year:

2020

File:

PDF, 1023 KB

2020

47

Revealing inhomogeneous Si incorporation in GaN on nanometer scale by electrochemical etching

Sawicka, Marta, Fiuczek, Natalia, Turski, Henryk, Muziol, Grzegorz, Siekacz, Marcin, Nowakowski-Szkudlarek, Krzesimir, Feduniewicz-Zmuda, Anna, Wolny, Pawel, Skierbiszewski, Czeslaw

Journal:

Year:

2020

Language:

english

File:

PDF, 1.67 MB

english, 2020